Kingston Technology KSM26RS8/8HDI memory module 8 GB 1 x 8 GB DDR4 ECC
Special Price
£72.57
£87.08
Regular Price
£126.20
£151.44
Out of stock
SKU
KSM26RS8/8HDI
8GB, DDR4, 1Rx8, 1G x 72-Bit, PC4-2666, CL19
- Functionality and operations comply with the DDR4 SDRAM datasheet
- 16 internal banks
- Bi-Directional Differential Data Strobe
- 8 bit pre-fetch
- Supports ECC error correction and detection
- On-Die Termination (ODT)
- Temperature sensor with integrated SPD
- This product is in compliance with the RoHS directive
- Per DRAM Addressability is supported
- Internal Vref DQ level generation is available
- Write CRC is supported at all speed grades
- CA parity (Command/Address Parity) mode is supported
| Internal memory type | DDR4 |
|---|---|
| ECC | Yes |
| Memory form factor | 288-pin DIMM |
| Component for | PC/server |
| SKU | KSM26RS8/8HDI |
| EAN | 0740617308204 |
| Manufacturer | Kingston Technology |
| Availability | N |
| PDF URLs |
View PDF |
Kingston's KSM26RS8/8HDI is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
| Power | |
|---|---|
| Memory voltage | 1.2 V |
| Design | |
| JEDEC standard | Yes |
| Technical details | |
| Country of origin | Taiwan |
| Compliance certificates | RoHS |
| Memory | |
| Memory layout (modules x size) | 1 x 8 GB |
| Internal memory | 8 GB |
| Component for | PC/Server |
| Memory form factor | 288-pin DIMM |
| CAS latency | 19 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 1024M x 72 |
| Row cycle time | 46.25 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| Features | |
|---|---|
| Memory layout (modules x size) | 1 x 8 GB |
| Internal memory | 8 GB |
| Component for | PC/Server |
| Memory form factor | 288-pin DIMM |
| CAS latency | 19 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 1024M x 72 |
| Row cycle time | 46.25 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| Country of origin | Taiwan |
| ECC | Yes |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| JEDEC standard | Yes |
| Harmonized System (HS) code | 84733020 |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Country of origin | Taiwan |
| Harmonized System (HS) code | 84733020 |
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